AS7C31026C-10TIN Увеличить

резисторная сборка RES ARRAY SMD: RES ARRAY 8P4N 0603X4 120R0 5% CAT16121J4LF CAT16-121J4LF

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The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits.

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2 шт.

4 руб С НДС

Характеристики

Тип корпуса TSOP II-44
Шкаф 01
Бокс 00
Ячейка 01

Описание

The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications.

When CE is high, the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).

A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode.

The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The device is packaged in common industry standard packages.

A 1MB 3.3V Fast Asynchronous Alliance product that has a 64K x16 configuration, with industrial temperature range (-40˚C to 85˚C), and a 44-pin TSOP II package. The part supports 10 nanoseconds speeds and is RoHS compliant.

- See more at: http://www.futureelectronics.com/en/Technologies/Product.aspx?ProductID=AS7C31026C10TINALLIANCEMEMORYINC7369291&IM=0#sthash.sI3WZFfz.dpuf

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