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The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits.
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Тип корпуса | TSOP II-44 |
Шкаф | 01 |
Бокс | 00 |
Ячейка | 01 |
When CE is high, the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode.
The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The device is packaged in common industry standard packages.
- See more at: http://www.futureelectronics.com/en/Technologies/Product.aspx?ProductID=AS7C31026C10TINALLIANCEMEMORYINC7369291&IM=0#sthash.sI3WZFfz.dpuf